Toshiba Develops BENAND™ Flash Memory

IRVINE, Calif., Jan. 5, 2012  /PRNewswire/ — Toshiba America Electronic Components, Inc. (TAEC)* today announced the development of BENAND™[1], a versatile, multi-application single level cell (SLC) NAND flash memory with embedded error correction code (ECC). The simple interface and high reliability of small capacity SLC NAND has enabled it to be widely used in consumer applications and industrial programming. Samples of eight BENAND products in two capacities, 4Gb and 8Gb, are now available, with mass production beginning March 2012.

BENAND’s diverse applications include LCD TVs, digital cameras, robots and other industrial applications that include 2-way radios, thermostats, home gateways, cable boxes, POS systems, smart meters, vending machines, in-flight entertainment systems and LCD advertising systems. BENAND removes the burden of ECC from the host processor while minimizing protocol changes and allowing host processors to support leading-edge process NAND flash memory in a timely manner. Package and pin configuration compatibility are assured with general SLC NAND flash, allowing for easy replacement in existing products.

Until now, the ECC has been embedded in the host processor and corrected 1 bit per 512 bytes. However, advances in memory process technology require enhanced error correction; more than 4 bit correction per 512 bytes for NAND flash fabricated with 32nm process. For NAND flash memory without ECC fabricated with 32nm and beyond, the controller in the host processor must be changed to secure the required level of correction.

“Toshiba’s BENAND enables smooth migration to the latest SLC NAND process technologies,” noted Brian Kumagai, senior business development manager, NAND flash memory products for TAEC.  “With its on-board ECC, BENAND provides rapid migration to higher density SLC NAND for long life-cycle applications such as industrial and OEM.”

Leave a Reply